onsemi 2N6043G Transistor, 8 A NPN, 60 V dc, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

₩53,040.00

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  • 최종적인 250 개 unit(s)이 배송 준비 됨

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한팩당
Per Tube*
50 - 450₩1,060.80₩53,040.00
500 - 950₩1,033.50₩51,714.00
1000 +₩1,008.15₩50,427.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
184-4152
제조사 부품 번호:
2N6043G
제조업체:
onsemi
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브랜드

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

8A

Maximum Collector Emitter Voltage Vceo

60V dc

Package Type

TO-220

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

60V dc

Minimum Operating Temperature

-65°C

Maximum Emitter Base Voltage VEBO

5V dc

Minimum DC Current Gain hFE

1000

Transistor Polarity

NPN

Maximum Power Dissipation Pd

75W

Maximum Transition Frequency ft

1MHz

Pin Count

3

Maximum Operating Temperature

150°C

Series

2N6043

Length

10.53mm

Standards/Approvals

No

Height

30.02mm

Automotive Standard

No

COO (Country of Origin):
CN
The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP), and 2N6043, 2N6045 (NPN) are complementary devices.

High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045

Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Pb-Free Packages are Available

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