onsemi Transistor, 30 A NPN, 250 V, 3-Pin TO-218
- RS 제품 번호:
- 184-1168P
- 제조사 부품 번호:
- MJH11020G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal 8 units (supplied in a tube)*
₩83,200.00
재고있음
- 6 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 8 - 14 | ₩10,400.00 |
| 16 + | ₩10,250.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 184-1168P
- 제조사 부품 번호:
- MJH11020G
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 30A | |
| Maximum Collector Emitter Voltage Vceo | 250V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 200V | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 33.15mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 30A | ||
Maximum Collector Emitter Voltage Vceo 250V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 200V | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 33.15mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.
High DC Current Gain @ 10 Adc -
hFE = 400 Min (All Types)
Collector-Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) MJH11018, 17
VCEO(sus) = 200 Vdc (Min) - MJH11020, 19
VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
Low Collector-Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
Monolithic Construction
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