제조사부품번호

Infineon BFP840FESDH6327XTSA1 Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP

RS 제품 번호:: 170-2364
제조사 부품 번호:: BFP840FESDH6327XTSA1
제조업체:: Infineon

Infineon BFP840FESDH6327XTSA1 Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 pack of 20 units)*

₩7,971.20

재고있음

160 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
20 - 740	₩398.56	₩7,971.20
760 - 1480	₩387.28	₩7,764.40
1500 +	₩383.52	₩7,651.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 170-2364
제조사 부품 번호:: BFP840FESDH6327XTSA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Transistor
	Maximum DC Collector Current Idc	35mA
	Maximum Collector Emitter Voltage Vceo	2.25V
	Package Type	TSFP
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	2.9V
	Maximum Transition Frequency ft	85GHz
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	150
	Maximum Power Dissipation Pd	75mW
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Pin Count	4
	Length	1.4mm
	Series	BFP840FESD
	Standards/Approvals	No
	Width	0.8 mm
	Height	0.55mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Transistor
	Maximum DC Collector Current Idc 35mA
	Maximum Collector Emitter Voltage Vceo 2.25V
	Package Type TSFP
	Mount Type Surface
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 2.9V
	Maximum Transition Frequency ft 85GHz
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 150
	Maximum Power Dissipation Pd 75mW
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Pin Count 4
	Length 1.4mm
	Series BFP840FESD
	Standards/Approvals No
	Width 0.8 mm
	Height 0.55mm
	Automotive Standard No

The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.

Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology

2 kV ESD robustness (HBM) due to integrated protection circuits

High maximum RF input power of 21 dBm

0.6 dB minimum noise

26 dB maximum gain

23.5 dBm OIP3 typical at 5.5 GHz, 25 mA

Accurate SPICE GP model available to enable effective design in process

Infineon BFP840FESDH6327XTSA1 Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP

관련된 링크들