onsemi MMBT5550LT1G NPN High Voltage Transistor, 600 mA NPN, 140 V dc, 3-Pin SOT-23

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Subtotal 2000 units (supplied on a reel)*

₩48,000.00

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  • 2027년 10월 22일 부터 배송
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* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
765-318P
제조사 부품 번호:
MMBT5550LT1G
제조업체:
onsemi
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모두 선택

브랜드

onsemi

Product Type

NPN High Voltage Transistor

Maximum DC Collector Current Idc

600mA

Maximum Collector Emitter Voltage Vceo

140V dc

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

160V dc

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

6V dc

Transistor Polarity

NPN

Minimum DC Current Gain hFE

60

Maximum Power Dissipation Pd

225mW

Maximum Operating Temperature

150°C

Pin Count

3

Series

MMBT5550L

Width

1.4mm

Standards/Approvals

RoHS Compliant

Height

1.01mm

Length

3.04mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The onsemi NPN silicon transistor designed for applications requiring high voltage capabilities. With an impressive collector-emitter voltage rating of 140V, this device is engineered for optimum reliability in automotive and other industrial applications demanding stringent performance standards. Its Pb-free and halogen-free construction further reflects its compatibility with contemporary environmental regulations, ensuring compliance without compromising quality. Optimized for continuous collector currents of up to 600mA, this transistor excels in high-speed switching operations, offering minimal delays and enhanced efficiency for various electronic circuits.

High voltage capability with collector-emitter voltage ratings up to 140V

Designed for a continuous collector current of 600mA, supporting demanding applications

Pb-free and halogen-free construction complies with RoHS standards, promoting environmental safety

AEC-Q101 qualified, ensuring reliability in automotive and critical applications

Optimised for fast switching speeds, facilitating efficient circuit operation

Low collector-emitter saturation voltage, enhancing overall energy efficiency

Enhanced thermal stability with low thermal resistance, improving performance in high-temperature environments

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