onsemi ESD5581N2T5G 1-Element Bi-Directional TVS Diode, 250 mW, 2-Pin X2-DFN
- RS 제품 번호:
- 185-9076
- 제조사 부품 번호:
- ESD5581N2T5G
- 제조업체:
- onsemi
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- RS 제품 번호:
- 185-9076
- 제조사 부품 번호:
- ESD5581N2T5G
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Direction Type | Bi-Directional | |
| Product Type | TVS Diode | |
| Diode Configuration | Single | |
| Minimum Breakdown Voltage Vbr | 5.2V | |
| Mount Type | Surface | |
| Package Type | X2-DFN | |
| Maximum Reverse Stand-off Voltage Vwm | 5V | |
| Pin Count | 2 | |
| Peak Pulse Power Dissipation Pppm | 250mW | |
| Clamping Voltage VC | 12V | |
| Minimum Operating Temperature | -55°C | |
| Test Current It | 1mA | |
| ESD Protection | Yes | |
| Maximum Peak Pulse Current Ippm | 6A | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | 150°C | |
| Width | 360μm | |
| Length | 660μm | |
| Standards/Approvals | No | |
| Height | 280μm | |
| Maximum Reverse Leakage Current | 100nA | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Direction Type Bi-Directional | ||
Product Type TVS Diode | ||
Diode Configuration Single | ||
Minimum Breakdown Voltage Vbr 5.2V | ||
Mount Type Surface | ||
Package Type X2-DFN | ||
Maximum Reverse Stand-off Voltage Vwm 5V | ||
Pin Count 2 | ||
Peak Pulse Power Dissipation Pppm 250mW | ||
Clamping Voltage VC 12V | ||
Minimum Operating Temperature -55°C | ||
Test Current It 1mA | ||
ESD Protection Yes | ||
Maximum Peak Pulse Current Ippm 6A | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature 150°C | ||
Width 360μm | ||
Length 660μm | ||
Standards/Approvals No | ||
Height 280μm | ||
Maximum Reverse Leakage Current 100nA | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The ESD5581 is designed to protect voltage sensitive components that require low capacitance from ESD events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs such as USB 2.0 high speed applications.
Low Capacitance, 5.0 μF (Max)
Low Clamping Voltage, 10 V
Small Body Outline Dimensions, 0.62 mm x 0.32 mm
Low Body Height, 0.3 mm
Stand−off Voltage, 5 V
Applications
USB ID
GPIO
μSD Protection
End Products
Flash Drives
HDD
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