제조사부품번호

Infineon SRAM, S70KL1282GABHV020- 128 MB

RS 제품 번호:: 273-5437
제조사 부품 번호:: S70KL1282GABHV020
제조업체:: Infineon

Infineon SRAM, S70KL1282GABHV020- 128 MB

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RS 제품 번호:: 273-5437
제조사 부품 번호:: S70KL1282GABHV020
제조업체:: Infineon

참조 문서

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모두 선택	제품 정보	값
	브랜드	Infineon
	Memory Size	128MB
	Product Type	SRAM
	Number of Bits per Word	16
	Maximum Random Access Time	35ns
	Maximum Clock Frequency	200MHz
	Minimum Supply Voltage	1.8V
	Timing Type	DDR
	Maximum Supply Voltage	3V
	Package Type	FBGA-24 Ball
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	105°C
	Series	HYPERRAM
	Standards/Approvals	No
	Automotive Standard	AEC-Q100

	모두 선택
	브랜드 Infineon
	Memory Size 128MB
	Product Type SRAM
	Number of Bits per Word 16
	Maximum Random Access Time 35ns
	Maximum Clock Frequency 200MHz
	Minimum Supply Voltage 1.8V
	Timing Type DDR
	Maximum Supply Voltage 3V
	Package Type FBGA-24 Ball
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 105°C
	Series HYPERRAM
	Standards/Approvals No
	Automotive Standard AEC-Q100

Datasheet - S70KL1282GABHV020

The Infineon DRAM is a high speed CMOS self refresh DRAM, with HYPERBUS™ interface. The DRAM array uses dynamic cells that require periodic refresh. Refresh control logic within the device manages the refresh operations on the DRAM array when the memory is not being actively read or written by the HYPERBUS™ interface master. Since the host is not required to manage any refresh operations, the DRAM array appears to the host as though the memory uses static cells that retain data without refresh. Hence, the memory is more accurately described as pseudo static RAM.

HYPERBUS™ interface

200 MHz maximum clock rate

Configurable burst characteristics

Data throughput up to 400 MBps

Bidirectional read write data strobe

Optional DDR centre aligned read strobe

Infineon SRAM, S70KL1282GABHV020- 128 MB

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