Infineon S27KS0643GABHV020, DDR SDRAM Memory 64Mbit Surface Mount, 200MHz, 1.7 V to 2 V, 24-Pin FBGA
- RS 제품 번호:
- 201-7970
- 제조사 부품 번호:
- S27KS0643GABHV020
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 4 units)*
₩21,823.04
재고있음
- 284 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 4 - 80 | ₩5,455.76 | ₩21,826.80 |
| 84 - 164 | ₩5,335.44 | ₩21,338.00 |
| 168 + | ₩5,217.00 | ₩20,868.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 201-7970
- 제조사 부품 번호:
- S27KS0643GABHV020
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 64Mbit | |
| SDRAM Class | DDR | |
| Organisation | 8M x 8 | |
| Data Rate | 200MHz | |
| Data Bus Width | 8bit | |
| Address Bus Width | 16bit | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 35ns | |
| Number of Words | 8M | |
| Mounting Type | Surface Mount | |
| Package Type | FBGA | |
| Pin Count | 24 | |
| Dimensions | 8 x 6 x 1mm | |
| Height | 1mm | |
| Length | 8mm | |
| Maximum Operating Temperature | +105 °C | |
| Width | 6mm | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 1.7 V | |
| Maximum Operating Supply Voltage | 2 V | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 64Mbit | ||
SDRAM Class DDR | ||
Organisation 8M x 8 | ||
Data Rate 200MHz | ||
Data Bus Width 8bit | ||
Address Bus Width 16bit | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 35ns | ||
Number of Words 8M | ||
Mounting Type Surface Mount | ||
Package Type FBGA | ||
Pin Count 24 | ||
Dimensions 8 x 6 x 1mm | ||
Height 1mm | ||
Length 8mm | ||
Maximum Operating Temperature +105 °C | ||
Width 6mm | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 1.7 V | ||
Maximum Operating Supply Voltage 2 V | ||
The Cypress Semiconductor S27KL0642/S27KS0642 is a 64 Mb HyperRAM which is a high-speed CMOS, self-refresh DRAM, with Hyper Bus interface. The array of the DRAM uses dynamic cells that require periodic refresh. The refresh control logic which is within the device, manages the refresh operations on the DRAM array when the memory is not being actively read or written by the Hyper Bus interface master (host). The DRAM array appears to the host as though the memory uses static cells that retain data without refresh, as the host is not required to manage any refresh operations. Hence, this memory is more accurately called or can be described as Pseudo Static RAM (PSRAM).
Temperature Range: -40°C to +85°C
Interface Bandwidth (MBps): 400MBps
RoHS Compliant
Interface Bandwidth (MBps): 400MBps
RoHS Compliant
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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