Alliance Memory AS4C256M16D3C-10BIN, SDRAM 4GByte Through Hole, 933MHz, 96-Pin 96-ball FBGA
- RS 제품 번호:
- 665-409
- 제조사 부품 번호:
- AS4C256M16D3C-10BIN
- 제조업체:
- Alliance Memory
N
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RS는 더 이상 이 제품을 입고하지 않습니다.
- RS 제품 번호:
- 665-409
- 제조사 부품 번호:
- AS4C256M16D3C-10BIN
- 제조업체:
- Alliance Memory
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Alliance Memory | |
| Memory Size | 4GByte | |
| Organisation | 256M x 16 | |
| SDRAM Class | DDR3 | |
| Data Rate | 933MHz | |
| Data Bus Width | 16bit | |
| Mounting Type | Through Hole | |
| Package Type | 96-ball FBGA | |
| Pin Count | 96 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Alliance Memory | ||
Memory Size 4GByte | ||
Organisation 256M x 16 | ||
SDRAM Class DDR3 | ||
Data Rate 933MHz | ||
Data Bus Width 16bit | ||
Mounting Type Through Hole | ||
Package Type 96-ball FBGA | ||
Pin Count 96 | ||
- COO (Country of Origin):
- TW
The Alliance Memory Synchronous DRAM is based on a double data rate architecture to achieve high-speed operation and is internally configured as eight banks. The 4Gb chip is organized as 32Mbit x 16 I/Os across 8 banks. It supports double-data-rate transfer speeds up to 2133 Mb/sec per pin for general applications. The design complies with DDR3 standards, with all control and address inputs synchronized to a pair of externally supplied differential clocks.
Fully synchronous operation
8 internal banks for concurrent operation
Pipelined internal architecture
Precharge and active power down
8 internal banks for concurrent operation
Pipelined internal architecture
Precharge and active power down
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