Intelligent Memory IM4G08D3FDBG-107I SDRAM 4 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- RS 제품 번호:
- 588-646
- 제조사 부품 번호:
- IM4G08D3FDBG-107I
- 제조업체:
- Intelligent Memory
Subtotal (1 unit)*
₩18,800.00
일시적 품절
- 20 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 + | ₩18,800.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 588-646
- 제조사 부품 번호:
- IM4G08D3FDBG-107I
- 제조업체:
- Intelligent Memory
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Intelligent Memory | |
| Memory Size | 4GB | |
| Product Type | SDRAM | |
| Organisation | 64M x 8 | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 1066MHz | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 1.25ns | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 78 | |
| Maximum Operating Temperature | 95°C | |
| Series | IM4G(04/08)D3FDB | |
| Length | 10.6mm | |
| Height | 1.2mm | |
| Width | 7.5 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q100 | |
| Maximum Supply Voltage | 1.45V | |
| Minimum Supply Voltage | 1.283V | |
| 모두 선택 | ||
|---|---|---|
브랜드 Intelligent Memory | ||
Memory Size 4GB | ||
Product Type SDRAM | ||
Organisation 64M x 8 | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 1066MHz | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 1.25ns | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 78 | ||
Maximum Operating Temperature 95°C | ||
Series IM4G(04/08)D3FDB | ||
Length 10.6mm | ||
Height 1.2mm | ||
Width 7.5 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q100 | ||
Maximum Supply Voltage 1.45V | ||
Minimum Supply Voltage 1.283V | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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