Intelligent Memory IME1G16D3EEBG-15EI SDRAM 1 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- RS 제품 번호:
- 588-643
- 제조사 부품 번호:
- IME1G16D3EEBG-15EI
- 제조업체:
- Intelligent Memory
Subtotal (1 unit)*
₩32,680.00
일시적 품절
- 2026년 11월 16일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩32,680.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 588-643
- 제조사 부품 번호:
- IME1G16D3EEBG-15EI
- 제조업체:
- Intelligent Memory
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Intelligent Memory | |
| Memory Size | 1GB | |
| Product Type | SDRAM | |
| Organisation | 8M x 16 | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 72 | |
| Maximum Clock Frequency | 800MHz | |
| Maximum Random Access Time | 1.25ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 96 | |
| Maximum Operating Temperature | 95°C | |
| Series | IME1G(08/16)D3EEB | |
| Length | 10.5mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Minimum Supply Voltage | 1.425V | |
| Maximum Supply Voltage | 1.575V | |
| Automotive Standard | AEC-Q100 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Intelligent Memory | ||
Memory Size 1GB | ||
Product Type SDRAM | ||
Organisation 8M x 16 | ||
Data Bus Width 16bit | ||
Number of Bits per Word 72 | ||
Maximum Clock Frequency 800MHz | ||
Maximum Random Access Time 1.25ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 96 | ||
Maximum Operating Temperature 95°C | ||
Series IME1G(08/16)D3EEB | ||
Length 10.5mm | ||
Standards/Approvals JEDEC, RoHS | ||
Minimum Supply Voltage 1.425V | ||
Maximum Supply Voltage 1.575V | ||
Automotive Standard AEC-Q100 | ||
- COO (Country of Origin):
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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