STMicroelectronics 1200 V 30 A Rectifier & Schottky Diode Rectifier Diode 2-Pin DO-247 LL
- RS 제품 번호:
- 275-1365
- 제조사 부품 번호:
- STPSC30G12WLY
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩735,963.60
재고있음
- 270 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 90 | ₩24,532.12 | ₩735,963.60 |
| 120 + | ₩23,795.16 | ₩713,871.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 275-1365
- 제조사 부품 번호:
- STPSC30G12WLY
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | DO-247 LL | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPS | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1550A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Width | 5.1 mm | |
| Height | 41.2mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type DO-247 LL | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPS | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1550A | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Width 5.1 mm | ||
Height 41.2mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
None or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Avalanche energy rated
관련된 링크들
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