STMicroelectronics 100 V 10 A Rectifier & Schottky Diode Rectifier Diode 3-Pin ECOPACK
- RS 제품 번호:
- 273-5111
- 제조사 부품 번호:
- STPST10H100SBYTR
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩2,130,375.00
일시적 품절
- 2026년 10월 02일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩852.15 | ₩2,132,325.00 |
| 5000 - 5000 | ₩826.80 | ₩2,068,462.50 |
| 7500 + | ₩803.40 | ₩2,006,550.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-5111
- 제조사 부품 번호:
- STPST10H100SBYTR
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | ECOPACK | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Series | STPS | |
| Diode Configuration | Common Anode | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 210A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.1mm | |
| Standards/Approvals | RoHS | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Surface | ||
Product Type Rectifier & Schottky Diode | ||
Package Type ECOPACK | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 100V | ||
Series STPS | ||
Diode Configuration Common Anode | ||
Rectifier Type Rectifier Diode | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 210A | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Height 10.1mm | ||
Standards/Approvals RoHS | ||
Length 6.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics DPAK power schottky trench rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface.
Low forward voltage drop
Low recovery charges
Reduces conduction, reverse and switching losses
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