STMicroelectronics 1200 V 40 A Rectifier & Schottky Diode Rectifier Diode 3-Pin TO-247
- RS 제품 번호:
- 273-5109
- 제조사 부품 번호:
- STPSC40H12CWY
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩656,834.40
일시적 품절
- 300 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩21,894.48 | ₩656,817.48 |
| 60 - 60 | ₩20,798.44 | ₩623,953.20 |
| 90 + | ₩20,174.28 | ₩605,228.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-5109
- 제조사 부품 번호:
- STPSC40H12CWY
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPS | |
| Diode Configuration | Dual | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.75mm | |
| Width | 5.15 mm | |
| Height | 34.95mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPS | ||
Diode Configuration Dual | ||
Rectifier Type Rectifier Diode | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.75mm | ||
Width 5.15 mm | ||
Height 34.95mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics schottky silicon carbide diode available in TO-247, is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high-voltage periphery
PPAP capable
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