onsemi 1.2 kV 40 A Rectifier & Schottky Diode Schottky 3-Pin TO-247-3LD NDSH40120CDN
- RS 제품 번호:
- 261-9556
- 제조사 부품 번호:
- NDSH40120CDN
- 제조업체:
- onsemi
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- RS 제품 번호:
- 261-9556
- 제조사 부품 번호:
- NDSH40120CDN
- 제조업체:
- onsemi
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-247-3LD | |
| Maximum Continuous Forward Current If | 40A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | NDSH40120CDN | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 200μA | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 123A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.82mm | |
| Length | 41.07mm | |
| Standards/Approvals | RoHS | |
| Width | 15.87mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-247-3LD | ||
Maximum Continuous Forward Current If 40A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series NDSH40120CDN | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 200μA | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 123A | ||
Maximum Operating Temperature 175°C | ||
Height 4.82mm | ||
Length 41.07mm | ||
Standards/Approvals RoHS | ||
Width 15.87mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-3L
The ON Semiconductor schottky diodes & rectifiers silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It consist of no reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets silicon carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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