Infineon 650 V 16 A Rectifier & Schottky Diode 2-Pin TO-220 IDH16G65C5XKSA2
- RS 제품 번호:
- 257-9258
- 제조사 부품 번호:
- IDH16G65C5XKSA2
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩8,478.80
재고있음
- 451 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩8,478.80 |
| 10 - 24 | ₩7,651.60 |
| 25 - 99 | ₩7,031.20 |
| 100 - 499 | ₩6,204.00 |
| 500 + | ₩5,395.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-9258
- 제조사 부품 번호:
- IDH16G65C5XKSA2
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 16A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | IDH16G65C5 | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 1400μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 124A | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 16A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series IDH16G65C5 | ||
Pin Count 2 | ||
Peak Reverse Current Ir 1400μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 124A | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon IDH series is the 600 V silicion carbide schottky diode in real 2 pin package. The CoolSiC schottky diodes generation 5 600V, 2 A in a DPAK real2pin package represents our leading edge technology for SiC schottky barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology.
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb free lead plating
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