Infineon 650 V 20 A Rectifier & Schottky Diode 3-Pin TO-247
- RS 제품 번호:
- 249-6936
- 제조사 부품 번호:
- IDW20G65C5XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩192,436.80
재고있음
- 90 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩6,414.56 | ₩192,453.72 |
| 60 - 60 | ₩5,773.48 | ₩173,221.32 |
| 90 + | ₩5,600.52 | ₩168,032.52 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-6936
- 제조사 부품 번호:
- IDW20G65C5XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDW20G65 | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 103A | |
| Maximum Forward Voltage Vf | 1.7V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | and JESD22, J-STD20, JEDEC1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDW20G65 | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 103A | ||
Maximum Forward Voltage Vf 1.7V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals and JESD22, J-STD20, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new. It has more compact design and thin-wafer technology.
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behaviour
No reverse recovery/ No forward recovery
Temperature independent switching behaviour
High surge current capability
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC1 for target applications
Optimized for high temperature operation
관련된 링크들
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