Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- RS 제품 번호:
- 249-6926
- 제조사 부품 번호:
- IDD10SG60CXTMA2
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
₩12,140,000.00
일시적 품절
- 2027년 2월 11일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩4,856.00 | ₩12,139,000.00 |
| 5000 - 5000 | ₩4,758.00 | ₩11,896,000.00 |
| 7500 + | ₩4,616.00 | ₩11,539,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-6926
- 제조사 부품 번호:
- IDD10SG60CXTMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Mount Type | Surface | |
| Product Type | SiC Schottky Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Series | XDD10SG60 | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Reverse Current Ir | 860μA | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Mount Type Surface | ||
Product Type SiC Schottky Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Series XDD10SG60 | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Reverse Current Ir 860μA | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
관련된 링크들
- Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK IDD06SG60CXTMA2
- Infineon 600 V 4 A Schottky Diode Schottky 3-Pin DPAK IDD04SG60CXTMA2
- Infineon 600 V 4 A Schottky Diode Schottky 3-Pin DPAK
- Infineon 600 V 8 A Rectifier & Schottky Diode PG-TO252-3 IDD08SG60CXTMA2
- Infineon 600 V 3 A Rectifier & Schottky Diode 3-Pin PG-TO252-3 IDD03SG60CXTMA2
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP