Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK
- RS 제품 번호:
- 249-6926
- 제조사 부품 번호:
- IDD10SG60CXTMA2
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
₩12,140,000.00
일시적 품절
- 2026년 12월 14일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩4,856.00 | ₩12,139,000.00 |
| 5000 - 5000 | ₩4,758.00 | ₩11,896,000.00 |
| 7500 + | ₩4,616.00 | ₩11,539,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 249-6926
- 제조사 부품 번호:
- IDD10SG60CXTMA2
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | SiC Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Diode Configuration | Single | |
| Series | XDD10SG60 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 860μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type SiC Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Diode Configuration Single | ||
Series XDD10SG60 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 860μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
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