Infineon 650 V 41 A Schottky Barrier Diode Schottky TO-220
- RS 제품 번호:
- 242-0972
- 제조사 부품 번호:
- IDH20G65C6XKSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tube of 500 units)*
₩2,724,120.00
일시적 품절
- 2026년 5월 29일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 500 - 500 | ₩5,448.24 | ₩2,724,590.00 |
| 1000 - 1000 | ₩5,339.20 | ₩2,670,070.00 |
| 1500 + | ₩5,179.40 | ₩2,589,888.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 242-0972
- 제조사 부품 번호:
- IDH20G65C6XKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Schottky Barrier Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 41A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | XDH20G65 | |
| Rectifier Type | Schottky | |
| Peak Reverse Current Ir | 153μA | |
| Maximum Forward Voltage Vf | 1.25V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Schottky Barrier Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 41A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series XDH20G65 | ||
Rectifier Type Schottky | ||
Peak Reverse Current Ir 153μA | ||
Maximum Forward Voltage Vf 1.25V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 99A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
The Infineon Schottky diodes & rectifiers SIC DIODES have repetitive reverse voltage(Vrrm) is 650 V.The operating temperature is starts from -55 °C to 175 °C.
Through hole mounting technology
108 W Power Dissipation
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
관련된 링크들
- Infineon 650 V 41 A Schottky Barrier Diode Schottky TO-220 IDH20G65C6XKSA1
- Infineon 650 V 10 A Schottky Barrier Diode Schottky 2-Pin TO-220
- Infineon 650 V 12 A Schottky Barrier Diode Schottky 2-Pin TO-220
- Infineon 650 V 8 A Schottky Barrier Diode Schottky 2-Pin TO-220
- Infineon 650 V 8 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH08G65C6XKSA1
- Infineon 650 V 12 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH12G65C6XKSA1
- Infineon 650 V 10 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH10G65C6XKSA1
- Infineon 650 V 16 A Schottky Diode Schottky 2-Pin TO-220