Infineon 650 V 10 A Schottky Barrier Diode Schottky 2-Pin TO-220 IDH10G65C6XKSA1
- RS 제품 번호:
- 216-8384
- 제조사 부품 번호:
- IDH10G65C6XKSA1
- 제조업체:
- Infineon
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- RS 제품 번호:
- 216-8384
- 제조사 부품 번호:
- IDH10G65C6XKSA1
- 제조업체:
- Infineon
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참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Schottky Barrier Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | IDH10G65C6 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 55A | |
| Maximum Forward Voltage Vf | 1.25V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 77μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 29.95mm | |
| Length | 10.2mm | |
| Width | 4.5 mm | |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Schottky Barrier Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series IDH10G65C6 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 55A | ||
Maximum Forward Voltage Vf 1.25V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 77μA | ||
Maximum Operating Temperature 175°C | ||
Height 29.95mm | ||
Length 10.2mm | ||
Width 4.5 mm | ||
Standards/Approvals JEDEC (J-STD20 and JESD22) | ||
Automotive Standard No | ||
The Infineon CoolSiC generation 6 offers a new leading edge technology for the schottky barrier diode with current rating of 10 A. This latest generation is suitable for use in telecom SMPS and high-end servers, UPS systems, motor drives, solar inverters as well as PC silver box and lighting applications.
Best-in-class figure of merit
No reverse recovery charge
Temperature independent switching behaviour
High dv/dt ruggedness
Optimized thermal behaviour
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