Infineon 1200 V 10 A Diode SiC Schottky 3-Pin TO-247 IDW10G120C5BFKSA1
- RS 제품 번호:
- 222-4834
- 제조사 부품 번호:
- IDW10G120C5BFKSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩17,860.00
재고있음
- 276 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩8,930.00 | ₩17,860.00 |
| 10 - 98 | ₩8,704.40 | ₩17,408.80 |
| 100 - 248 | ₩8,497.60 | ₩16,995.20 |
| 250 - 498 | ₩8,281.40 | ₩16,562.80 |
| 500 + | ₩8,065.20 | ₩16,130.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4834
- 제조사 부품 번호:
- IDW10G120C5BFKSA1
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | 5th Generation CoolSiCTM | |
| Diode Configuration | Single | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 140A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Width | 5.21 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series 5th Generation CoolSiCTM | ||
Diode Configuration Single | ||
Rectifier Type SiC Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 140A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 21.1mm | ||
Length 16.13mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Width 5.21 mm | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 10 A in a TO-247-3 package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Best-in-class forward voltage (VF)
No reverse recovery charge
Mild positive temperature dependency of VF
Best-in-class surge current capability
Excellent thermal performance
관련된 링크들
- Infineon 1200 V 40 A Diode SiC Schottky 2-Pin TO-247 IDW40G120C5BFKSA1
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- Infineon 1200 V 15 A Diode Schottky 2-Pin TO-247 IDW15G120C5BFKSA1
- Infineon 1200 V 30 A Diode Schottky 2-Pin TO-247 IDW30G120C5BFKSA1
- Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247 IDW20G120C5BFKSA1
- Infineon 1200 V 20 A Diode Schottky 3-Pin TO-247
- Infineon 1200 V 30 A Diode Schottky 2-Pin TO-247
