제조사부품번호

Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1

RS 제품 번호:: 222-4831
제조사 부품 번호:: IDM08G120C5XTMA1
제조업체:: Infineon

Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩27,372.80

재고있음

1,120 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
5 - 5	₩5,474.56	₩27,372.80
10 - 95	₩5,376.80	₩26,884.00
100 - 245	₩5,279.04	₩26,395.20
250 - 495	₩5,185.04	₩25,925.20
500 +	₩5,091.04	₩25,455.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4831
제조사 부품 번호:: IDM08G120C5XTMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Mount Type	Surface
	Product Type	Diode
	Package Type	TO-247
	Maximum Continuous Forward Current If	8A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Diode Configuration	Silicon Carbide Schottky Diode
	Series	5th Generation thinQ!TM
	Rectifier Type	SiC Schottky
	Pin Count	3
	Peak Non-Repetitive Forward Surge Current Ifsm	70A
	Minimum Operating Temperature	-55°C
	Maximum Forward Voltage Vf	2.85V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC1)
	Height	10.4mm
	Length	6.65mm
	Width	2.35 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Mount Type Surface
	Product Type Diode
	Package Type TO-247
	Maximum Continuous Forward Current If 8A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Diode Configuration Silicon Carbide Schottky Diode
	Series 5th Generation thinQ!TM
	Rectifier Type SiC Schottky
	Pin Count 3
	Peak Non-Repetitive Forward Surge Current Ifsm 70A
	Minimum Operating Temperature -55°C
	Maximum Forward Voltage Vf 2.85V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC1)
	Height 10.4mm
	Length 6.65mm
	Width 2.35 mm
	Automotive Standard No

Datasheet - IDM08G120C5XTMA1

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Best-in-class forward voltage (VF)

No reverse recovery charge

Mild positive temperature dependency of VF

Best-in-class surge current capability

Excellent thermal performance

Infineon 1200 V 8 A Diode SiC Schottky 3-Pin TO-247 IDM08G120C5XTMA1

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