제조사부품번호

Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK

RS 제품 번호:: 222-4826
제조사 부품 번호:: IDM02G120C5XTMA1
제조업체:: Infineon

Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK

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대량 구매 할인 기용 가능

Subtotal (1 reel of 2500 units)*

₩3,346,400.00

일시적 품절

2026년 9월 04일 부터 배송

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수량	한팩당	릴당*
2500 - 10000	₩1,338.56	₩3,346,870.00
12500 +	₩1,312.24	₩3,280,130.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 222-4826
제조사 부품 번호:: IDM02G120C5XTMA1
제조업체:: Infineon

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	Diode
	Mount Type	Surface
	Package Type	TO-252
	Maximum Continuous Forward Current If	2A
	Peak Reverse Repetitive Voltage Vrrm	1200V
	Diode Configuration	Silicon Carbide Schottky Diode
	Series	5th Generation thinQ!TM
	Rectifier Type	SiC Schottky
	Pin Count	2
	Maximum Forward Voltage Vf	2.3V
	Minimum Operating Temperature	-55°C
	Peak Non-Repetitive Forward Surge Current Ifsm	37A
	Maximum Operating Temperature	175°C
	Height	10.4mm
	Width	2.35 mm
	Standards/Approvals	J-STD20 and JESD22
	Length	6.65mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type Diode
	Mount Type Surface
	Package Type TO-252
	Maximum Continuous Forward Current If 2A
	Peak Reverse Repetitive Voltage Vrrm 1200V
	Diode Configuration Silicon Carbide Schottky Diode
	Series 5th Generation thinQ!TM
	Rectifier Type SiC Schottky
	Pin Count 2
	Maximum Forward Voltage Vf 2.3V
	Minimum Operating Temperature -55°C
	Peak Non-Repetitive Forward Surge Current Ifsm 37A
	Maximum Operating Temperature 175°C
	Height 10.4mm
	Width 2.35 mm
	Standards/Approvals J-STD20 and JESD22
	Length 6.65mm
	Automotive Standard No

Datasheet - IDM02G120C5XTMA1

The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.

Revolutionary semiconductor material - Silicon Carbide

No reverse recovery current / No forward recovery

Temperature independent switching behavior

Low forward voltage even at high operating temperature

Tight forward voltage distribution

Excellent thermal performance

Extended surge current capability

Specified dv/dt ruggedness

Qualified according to JEDEC1) for target applications

Pb-free lead plating; RoHS compliant

Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK

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