Infineon 650 V 6 A SiC Silicon Carbide Diode Schottky 2-Pin TO-220 IDH06G65C5XKSA2
- RS 제품 번호:
- 218-6300
- 제조사 부품 번호:
- IDH06G65C5XKSA2
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 5 units)*
₩25,420.00
재고있음
- 추가로 2026년 10월 12일 부터 235 개 단위 배송
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수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩5,084.00 | ₩25,420.00 |
| 15 - 20 | ₩4,956.00 | ₩24,780.00 |
| 25 + | ₩4,876.00 | ₩24,380.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-6300
- 제조사 부품 번호:
- IDH06G65C5XKSA2
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Mount Type | Through Hole | |
| Product Type | SiC Silicon Carbide Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 750μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 54A | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.5mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Length | 10.2mm | |
| Height | 29.95mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Mount Type Through Hole | ||
Product Type SiC Silicon Carbide Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 750μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 54A | ||
Maximum Operating Temperature 175°C | ||
Width 4.5mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Length 10.2mm | ||
Height 29.95mm | ||
Automotive Standard No | ||
Infineon 5th Generation thinQ!TM Series SiC Silicon Carbide Diode, 6A Max Continuous Forward Current, 650V Peak Reverse Repetitive Voltage - IDH06G65C5XKSA2
This SiC silicon carbide diode is a high-voltage Schottky rectifier designed for power conversion and switching applications requiring fast recovery and thermal resilience. It operates across an extended temperature range and is supplied in a through-hole TO-220 package suited to conventional heatsinking and mounting methods.
Features and Benefits:
• 650V Peak reverse rating enables high-voltage rectification
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation
• 6A continuous forward current supports sustained load conduction
• 1.7V maximum forward voltage reduces conduction losses
• 54A surge current capacity handles transient inrush events
• 750μA Peak reverse current ensures low reverse leakage
• -55°C to 175°C operating range permits high-temperature operation
Applications
• Suitable for power supplies in industrial converters
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages
• Ideal for automotive-adjacent power electronics (non-automotive standard)
• Used with through-hole assemblies requiring TO-220 mounting
• Can be used for high-voltage DC link rectification
• Used for surge-tolerant input rectifier stages
What mounting method does it require?
It is intended for through-hole mounting in a TO-220 package which allows attachment to standard heatsinks.
How many electrical connections are present?
The device provides two pins for electrical connection consistent with single-diode rectifier topology.
Which standards were used in reliability assessment?
Qualification and testing reference J-STD-20 and JESD22 standards.
What type of rectifier topology is implemented?
The part employs a Schottky rectifier structure using silicon carbide semiconductor material.
What are the physical package dimensions?
The component measures 10.2 mm in length, 4.5 mm in width and 29.95 mm in height.
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