STMicroelectronics 1200 V 10 A Diode Schottky 3-Pin TO-247
- RS 제품 번호:
- 201-0864
- 제조사 부품 번호:
- STPSC20H12CWL
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩393,108.00
일시적 품절
- 2026년 8월 12일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩13,103.60 | ₩393,091.08 |
| 60 - 90 | ₩12,710.68 | ₩381,303.48 |
| 120 + | ₩12,329.04 | ₩369,871.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 201-0864
- 제조사 부품 번호:
- STPSC20H12CWL
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Series | STPSC20H12C | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Peak Reverse Current Ir | 30μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 40.82mm | |
| Height | 4.9mm | |
| Width | 15.77 mm | |
| Standards/Approvals | No | |
| Diameter | 3.55 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type Diode | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Series STPSC20H12C | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Peak Reverse Current Ir 30μA | ||
Maximum Operating Temperature 175°C | ||
Length 40.82mm | ||
Height 4.9mm | ||
Width 15.77 mm | ||
Standards/Approvals No | ||
Diameter 3.55 mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its high forward surge capability.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
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