Vishay 30 V 200 mA Diode Small Signal 2-Pin DO-35 SD103B-TR
- RS 제품 번호:
- 180-7138
- 제조사 부품 번호:
- SD103B-TR
- 제조업체:
- Vishay
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대량 구매 할인 기용 가능
Subtotal (1 pack of 100 units)*
₩10,528.00
마지막 RS 재고
- 700 개 단위 배송 준비 완료
- 2026년 2월 02일 부터 최종 15,900 개 단위 배송
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 100 - 2400 | ₩105.28 | ₩10,584.40 |
| 2500 - 4900 | ₩103.40 | ₩10,321.20 |
| 5000 + | ₩101.52 | ₩10,170.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 180-7138
- 제조사 부품 번호:
- SD103B-TR
- 제조업체:
- Vishay
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Vishay | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | DO-35 | |
| Maximum Continuous Forward Current If | 200mA | |
| Peak Reverse Repetitive Voltage Vrrm | 30V | |
| Diode Configuration | Single | |
| Rectifier Type | Small Signal | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 600mV | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 15A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 5μA | |
| Maximum Operating Temperature | 125°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Diameter | 1.7 mm | |
| Height | 3.9mm | |
| Length | 55.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Vishay | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type DO-35 | ||
Maximum Continuous Forward Current If 200mA | ||
Peak Reverse Repetitive Voltage Vrrm 30V | ||
Diode Configuration Single | ||
Rectifier Type Small Signal | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 600mV | ||
Peak Non-Repetitive Forward Surge Current Ifsm 15A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 5μA | ||
Maximum Operating Temperature 125°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Diameter 1.7 mm | ||
Height 3.9mm | ||
Length 55.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring
The low forward voltage drop and fast switching make it Ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications
Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems
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