제조사부품번호

STMicroelectronics 650 V 8 A Diode 2-Pin TO-220

RS 제품 번호:: 164-6971
제조사 부품 번호:: STPSC8065D
제조업체:: STMicroelectronics

STMicroelectronics 650 V 8 A Diode 2-Pin TO-220

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대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩164,124.00

일시적 품절

2026년 6월 25일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩3,282.48	₩164,142.80
100 - 450	₩3,211.04	₩160,570.80
500 +	₩3,115.16	₩155,758.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 164-6971
제조사 부품 번호:: STPSC8065D
제조업체:: STMicroelectronics

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	STMicroelectronics
	Mount Type	Through Hole
	Product Type	Diode
	Package Type	TO-220
	Maximum Continuous Forward Current If	8A
	Peak Reverse Repetitive Voltage Vrrm	650V
	Diode Configuration	Single
	Series	STPSC
	Pin Count	2
	Peak Reverse Current Ir	750μA
	Maximum Forward Voltage Vf	1.65V
	Peak Non-Repetitive Forward Surge Current Ifsm	200A
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Width	4.6 mm
	Length	10.4mm
	Height	15.75mm
	Diameter	3.75 mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 STMicroelectronics
	Mount Type Through Hole
	Product Type Diode
	Package Type TO-220
	Maximum Continuous Forward Current If 8A
	Peak Reverse Repetitive Voltage Vrrm 650V
	Diode Configuration Single
	Series STPSC
	Pin Count 2
	Peak Reverse Current Ir 750μA
	Maximum Forward Voltage Vf 1.65V
	Peak Non-Repetitive Forward Surge Current Ifsm 200A
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Width 4.6 mm
	Length 10.4mm
	Height 15.75mm
	Diameter 3.75 mm
	Standards/Approvals No
	Automotive Standard No

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases

No or negligible reverse recovery

Switching behavior independent of temperature

Dedicated to PFC applications

High forward surge capability

Operating Tj from -40 °C to 175 °C

STMicroelectronics 650 V 8 A Diode 2-Pin TO-220

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