STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y

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₩15,829.60

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1 - 9₩15,829.60
10 - 49₩13,936.44
50 - 99₩12,507.64
100 +₩10,763.00

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RS 제품 번호:
719-663
제조사 부품 번호:
STPSC30G065L2Y
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Mount Type

Through Hole

Product Type

Schottky Diode

Package Type

HU3PAK

Maximum Continuous Forward Current If

30A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

STPSC

Diode Configuration

Silicon Carbide Schottky Diode

Rectifier Type

SiC Schottky

Pin Count

7

Peak Non-Repetitive Forward Surge Current Ifsm

1100A

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

1200μA

Maximum Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

11.9mm

Height

3.6mm

Width

14.1 mm

Automotive Standard

AEC-Q101

The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.

AEC-Q101 qualified and PPAP capable

No reverse recovery charge in application current range

Switching behaviour independent of temperature

High forward surge current capability

ECOPACK2 compliant component

SMD with TOP side cooling package

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