STMicroelectronics 650 V 30 A Schottky Diode SiC Schottky 7-Pin HU3PAK STPSC30G065L2Y
- RS 제품 번호:
- 719-663
- 제조사 부품 번호:
- STPSC30G065L2Y
- 제조업체:
- STMicroelectronics
N
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩15,829.60
재고있음
- 추가로 2026년 2월 23일 부터 297 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩15,829.60 |
| 10 - 49 | ₩13,936.44 |
| 50 - 99 | ₩12,507.64 |
| 100 + | ₩10,763.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 719-663
- 제조사 부품 번호:
- STPSC30G065L2Y
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Schottky Diode | |
| Package Type | HU3PAK | |
| Maximum Continuous Forward Current If | 30A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | STPSC | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 7 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 1100A | |
| Maximum Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 1200μA | |
| Maximum Operating Temperature | 175°C | |
| Length | 11.9mm | |
| Height | 3.6mm | |
| Width | 14.1 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Schottky Diode | ||
Package Type HU3PAK | ||
Maximum Continuous Forward Current If 30A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series STPSC | ||
Rectifier Type SiC Schottky | ||
Pin Count 7 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 1100A | ||
Maximum Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 1200μA | ||
Maximum Operating Temperature 175°C | ||
Length 11.9mm | ||
Height 3.6mm | ||
Width 14.1 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
AEC-Q101 qualified and PPAP capable
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge current capability
ECOPACK2 compliant component
SMD with TOP side cooling package
관련된 링크들
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