STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065DY

N
본 제품군 열람하기
대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩2,613.20

Add to Basket
수량 선택 또는 입력
재고있음
  • 추가로 2026년 2월 23일 부터 300 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량
한팩당
1 - 9₩2,613.20
10 - 24₩2,293.60
25 - 99₩2,068.00
100 - 499₩2,011.60
500 +₩1,955.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
719-660
제조사 부품 번호:
STPSC10G065DY
제조업체:
STMicroelectronics
제품 정보를 선택해 유사 제품을 찾기
모두 선택

브랜드

STMicroelectronics

Product Type

Schottky Diode

Mount Type

Through Hole

Package Type

TO-220

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Silicon Carbide Schottky Diode

Series

STPSC

Rectifier Type

SiC Schottky

Pin Count

2

Peak Reverse Current Ir

425μA

Peak Non-Repetitive Forward Surge Current Ifsm

650A

Minimum Operating Temperature

-55°C

Maximum Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

10.4 mm

Length

15.75mm

Height

4.6mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.

AEC-Q101 qualified and PPAP capable

None or negligible reverse recovery charge in application current range

Switching behaviour independent of temperature

High forward surge capability

ECOPACK2 compliant component

관련된 링크들