STMicroelectronics 650 V 10 A Schottky Diode SiC Schottky 2-Pin TO-220 STPSC10G065DY

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1 - 9₩2,788.50
10 - 24₩2,457.00
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100 - 499₩2,145.00
500 +₩2,086.50

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RS 제품 번호:
719-660
제조사 부품 번호:
STPSC10G065DY
제조업체:
STMicroelectronics
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브랜드

STMicroelectronics

Mount Type

Through Hole

Product Type

Schottky Diode

Package Type

TO-220

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

STPSC

Diode Configuration

Silicon Carbide Schottky Diode

Rectifier Type

SiC Schottky

Pin Count

2

Maximum Forward Voltage Vf

1.3V

Peak Non-Repetitive Forward Surge Current Ifsm

650A

Minimum Operating Temperature

-55°C

Peak Reverse Current Ir

425μA

Maximum Operating Temperature

175°C

Height

4.6mm

Length

15.75mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The STMicroelectronics SiC diode is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature Based on latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions.

AEC-Q101 qualified and PPAP capable

None or negligible reverse recovery charge in application current range

Switching behaviour independent of temperature

High forward surge capability

ECOPACK2 compliant component

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