Nexperia 650 V 20 A Rectifier & Schottky Diode Merged Pin Schottky 2-Pin TO-247-2 PSC2065LQ
- RS 제품 번호:
- 554-329
- 제조사 부품 번호:
- PSC2065LQ
- 제조업체:
- Nexperia
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 unit)*
₩21,138.00
일시적 품절
- 2026년 12월 22일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩21,138.00 |
| 10 - 49 | ₩17,121.00 |
| 50 - 99 | ₩13,104.00 |
| 100 + | ₩11,622.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 554-329
- 제조사 부품 번호:
- PSC2065LQ
- 제조업체:
- Nexperia
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Nexperia | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-247-2 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | PSC2065L | |
| Rectifier Type | Merged Pin Schottky | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A | |
| Maximum Forward Voltage Vf | 2.6V | |
| Peak Reverse Current Ir | 1250μA | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.02mm | |
| Standards/Approvals | IEC 60134 | |
| Length | 20.95mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Nexperia | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-247-2 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series PSC2065L | ||
Rectifier Type Merged Pin Schottky | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 80A | ||
Maximum Forward Voltage Vf 2.6V | ||
Peak Reverse Current Ir 1250μA | ||
Maximum Operating Temperature 175°C | ||
Height 5.02mm | ||
Standards/Approvals IEC 60134 | ||
Length 20.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Nexperia leading edge Silicon Carbide (SiC) Schottky diode is used for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin TO247 R2P through-hole power plastic package offers temperature independent capacitive turn-off, zero recovery switching behaviour combined with an outstanding figure-of-merit. The Merged PiN Schottky diode improves the robustness expressed in a high IFSM.
High power density
Reduced system costs
System miniaturization
Reduced EMI
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