STMicroelectronics 1200 V 20 A Diode Schottky 8-Pin HU3PAK

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1 - 9₩38,064.00
10 - 99₩34,242.00
100 +₩31,590.00

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RS 제품 번호:
365-184
제조사 부품 번호:
STPSC20G12L2Y
제조업체:
STMicroelectronics
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모두 선택

브랜드

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

HU3PAK

Maximum Continuous Forward Current If

20A

Peak Reverse Repetitive Voltage Vrrm

1200V

Diode Configuration

Single

Series

STPS

Rectifier Type

Schottky

Pin Count

8

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

1100A

Maximum Forward Voltage Vf

2.1V

Peak Reverse Current Ir

500μA

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
JP
The STMicroelectronics SiC diode is a ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Thanks to the Schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turnoff behavior is independent of temperature. Based on the latest technology optimization, this diode has an improved forward surge current capability, making it Ideal for use in PFC, where this ST SiC diode will boost the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.

AEC-Q101 qualified and PPAP capable

None or negligible reverse recovery

Switching behaviour independent of temperature

Robust high voltage periphery

ECOPACK2 compliant component

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