Infineon BGSX22G6U10E6327XTSA1 RF Transceiver IC, 10-Pin PG-ULGA-10-1
- RS 제품 번호:
- 233-4356
- 제조사 부품 번호:
- BGSX22G6U10E6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩13,987.20
일시적 품절
- 4,300 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 20 | ₩699.36 | ₩13,968.40 |
| 40 - 80 | ₩684.32 | ₩13,686.40 |
| 100 - 220 | ₩669.28 | ₩13,404.40 |
| 240 - 480 | ₩658.00 | ₩13,141.20 |
| 500 + | ₩644.84 | ₩12,896.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-4356
- 제조사 부품 번호:
- BGSX22G6U10E6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Technology | GPIO | |
| Product Type | RF Transceiver IC | |
| Package Type | PG-ULGA-10-1 | |
| Pin Count | 10 | |
| Mount Type | Surface | |
| Interface Type | GPIO | |
| Operating Band 1 Frequency | 0.4GHz | |
| Operating Band 2 Frequency | 7.13GHz | |
| Minimum Supply Voltage | 1.6V | |
| Maximum Supply Voltage | 3.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Series | BGSX 22G6U 10 | |
| Length | 1.5mm | |
| Width | 1.1 mm | |
| Height | 0.6mm | |
| Standards/Approvals | RoHS and WEEE | |
| Automotive Standard | No | |
| Number of Operating Bands | 2 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Technology GPIO | ||
Product Type RF Transceiver IC | ||
Package Type PG-ULGA-10-1 | ||
Pin Count 10 | ||
Mount Type Surface | ||
Interface Type GPIO | ||
Operating Band 1 Frequency 0.4GHz | ||
Operating Band 2 Frequency 7.13GHz | ||
Minimum Supply Voltage 1.6V | ||
Maximum Supply Voltage 3.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Series BGSX 22G6U 10 | ||
Length 1.5mm | ||
Width 1.1 mm | ||
Height 0.6mm | ||
Standards/Approvals RoHS and WEEE | ||
Automotive Standard No | ||
Number of Operating Bands 2 | ||
The Infineon BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers low insertion loss even at high frequencies of up to 7.125 GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.6V to 3.6V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The device has a very small size of only 1.1mm x 1.5mm and a thickness of 0.60mm.
Low current consumption
Low insertion loss and high port to port isolation up to 7.125 GHz
Fast switching speed to enable 5G-SRS applications
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