Infineon BGSX22G5A10E6327XTSA1 RF Switch Circuit, 10-Pin ATSLP
- RS 제품 번호:
- 222-4790
- 제조사 부품 번호:
- BGSX22G5A10E6327XTSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 15 units)*
₩13,705.20
재고있음
- 4,140 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 15 - 15 | ₩913.68 | ₩13,705.20 |
| 30 - 75 | ₩896.76 | ₩13,460.80 |
| 90 - 225 | ₩881.72 | ₩13,216.40 |
| 240 - 465 | ₩866.68 | ₩12,990.80 |
| 480 + | ₩847.88 | ₩12,727.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 222-4790
- 제조사 부품 번호:
- BGSX22G5A10E6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | RF Switch Circuit | |
| Technology | MOS Technology | |
| Package Type | ATSLP | |
| Pin Count | 10 | |
| Mount Type | Surface | |
| Interface Type | GPIO | |
| Operating Band 1 Frequency | 0.1GHz | |
| Minimum Supply Voltage | 1.65V | |
| Operating Band 2 Frequency | 6GHz | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | BGSX 22G 5A 10 | |
| Height | 0.55mm | |
| Standards/Approvals | RoHS and WEEE | |
| Length | 1.5mm | |
| Width | 1.1 mm | |
| Automotive Standard | No | |
| Number of Operating Bands | 2 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type RF Switch Circuit | ||
Technology MOS Technology | ||
Package Type ATSLP | ||
Pin Count 10 | ||
Mount Type Surface | ||
Interface Type GPIO | ||
Operating Band 1 Frequency 0.1GHz | ||
Minimum Supply Voltage 1.65V | ||
Operating Band 2 Frequency 6GHz | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series BGSX 22G 5A 10 | ||
Height 0.55mm | ||
Standards/Approvals RoHS and WEEE | ||
Length 1.5mm | ||
Width 1.1 mm | ||
Automotive Standard No | ||
Number of Operating Bands 2 | ||
The Infineon BGSX22G5A10 RF MOS switch is specifically designed for LTE and WCDMA multi antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V.
RF CMOS DPDT antenna cross switch with power handling capability of up to 37 dBm
Ultra-low insertion loss and harmonics generation
0.1 to 6.0 GHz coverage
High port-to-port-isolation
No decoupling capacitors required if no DC applied on RF lines
General Purpose Input-Output (GPIO) Interface
Small form factor 1.1mm x 1.5mm
No power supply blocking required
관련된 링크들
- Infineon RF Switch Circuit, 10-Pin ATSLP
- Infineon BGS14MPA9E6327XTSA1 RF Switch Circuit, 9-Pin ATSLP
- Infineon RF Switch Circuit, 9-Pin ATSLP
- Infineon BGSX22G6U10E6327XTSA1 RF Transceiver IC, 10-Pin PG-ULGA-10-1
- BGSX33M5U16E6327XTSA1 Infineon, RF Amplifier, 17-Pin PG-ULGA-16-5
- Infineon BGS14PN10E6327XTSA1 RF Switch Circuit, 10-Pin TSNP
- Infineon BGSA11GN10E6327XTSA1 RF Switch Circuit, 10-Pin TSNP
- Infineon BGSA14GN10E6327XTSA1 RF Switch Circuit, 10-Pin TSNP
