BGA725L6E6327FTSA1 Infineon RF Amplifier Low Noise 20 dB, 6-Pin 1615 MHz TSLP
- RS 제품 번호:
- 258-0663
- 제조사 부품 번호:
- BGA725L6E6327FTSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩4,953.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩495.30 | ₩4,953.00 |
| 20 - 90 | ₩469.95 | ₩4,699.50 |
| 100 - 240 | ₩442.65 | ₩4,426.50 |
| 250 - 490 | ₩411.45 | ₩4,114.50 |
| 500 + | ₩378.30 | ₩3,783.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 258-0663
- 제조사 부품 번호:
- BGA725L6E6327FTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Amplifier Type | Low Noise | |
| Product Type | RF Amplifier | |
| Operating Frequency | 1615 MHz | |
| Technology | Silicon Germanium | |
| Gain | 20dB | |
| Minimum Supply Voltage | 1.5V | |
| Package Type | TSLP | |
| Maximum Supply Voltage | 3.6V | |
| Pin Count | 6 | |
| Noise Figure | 0.65dB | |
| Third Order Intercept OIP3 | -5dBm | |
| Minimum Operating Temperature | -40°C | |
| P1dB - Compression Point | 72mW | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Series | BGA | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Amplifier Type Low Noise | ||
Product Type RF Amplifier | ||
Operating Frequency 1615 MHz | ||
Technology Silicon Germanium | ||
Gain 20dB | ||
Minimum Supply Voltage 1.5V | ||
Package Type TSLP | ||
Maximum Supply Voltage 3.6V | ||
Pin Count 6 | ||
Noise Figure 0.65dB | ||
Third Order Intercept OIP3 -5dBm | ||
Minimum Operating Temperature -40°C | ||
P1dB - Compression Point 72mW | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Series BGA | ||
Automotive Standard No | ||
The Infineon silicon germanium low noise amplifier is a front-end low noise amplifier for global navigation satellite systems from 1550 MHz to 1615 MHz like GPS, GLONASS, Beidou, Galileo and others. The LNA provides 20.0 dB gain and 0.65 dB noise figure at a current consumption of 3.6 mA in the application configuration described in chapter 3. The silicon germanium low noise amplifier is based upon Infineon technologies B7HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage.
RF output internally matched to 50 Ω
Only 1 external SMD component necessary
2kV HBM ESD protection
Pb-free (RoHS compliant) package
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