Infineon High Side, High Side Power Switch IC 5-Pin, PG-TO-252
- RS 제품 번호:
- 244-0941
- 제조사 부품 번호:
- BTS6142DAUMA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 reel of 2500 units)*
₩6,434,300.00
일시적 품절
- 2026년 6월 01일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 2500 - 2500 | ₩2,573.72 | ₩6,433,830.00 |
| 5000 - 5000 | ₩2,522.96 | ₩6,305,050.00 |
| 7500 + | ₩2,445.88 | ₩6,116,110.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-0941
- 제조사 부품 번호:
- BTS6142DAUMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Power Switch Type | High Side | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Switch On Resistance RdsOn | 12mΩ | |
| Number of Outputs | 2 | |
| Mount Type | PCB | |
| Minimum Supply Voltage | -16V | |
| Package Type | PG-TO-252 | |
| Maximum Supply Voltage | 38V | |
| Pin Count | 5 | |
| Maximum Operating Temperature | 150°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 2.2mA | |
| Height | 2.3mm | |
| Length | 6.22mm | |
| Standards/Approvals | RoHS | |
| Width | 6.5 mm | |
| Series | BTS 6142D | |
| Automotive Standard | AEC | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Power Switch Type High Side | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Switch On Resistance RdsOn 12mΩ | ||
Number of Outputs 2 | ||
Mount Type PCB | ||
Minimum Supply Voltage -16V | ||
Package Type PG-TO-252 | ||
Maximum Supply Voltage 38V | ||
Pin Count 5 | ||
Maximum Operating Temperature 150°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 2.2mA | ||
Height 2.3mm | ||
Length 6.22mm | ||
Standards/Approvals RoHS | ||
Width 6.5 mm | ||
Series BTS 6142D | ||
Automotive Standard AEC | ||
The Infineon's BTS 6142D is a one channel high-side power switch in PG-TO252-5-11 package providing embedded protective functions including ReverSave, PG-TO252-5, RoHS.The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology.
Very low standby current
Current controlled input pin
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behavior at under-voltage
Green Product (RoHS compliant)
AEC qualified
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