Infineon EVAL-M1-6ED2230-B1 IGBT Gate Driver for 6ED2230S12T, FP15R12W1T4 for Compressors, Industrial Drives
- RS 제품 번호:
- 234-2102
- 제조사 부품 번호:
- EVALM16ED2230B1TOBO1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩1,091,810.00
제한된 재고
- 3 개 단위 배송 준비 완료
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수량 | 한팩당 |
|---|---|
| 1 - 2 | ₩1,091,810.00 |
| 3 - 4 | ₩1,069,964.40 |
| 5 + | ₩1,048,570.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 234-2102
- 제조사 부품 번호:
- EVALM16ED2230B1TOBO1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Power Management Function | IGBT Gate Driver | |
| For Use With | Compressors, Industrial Drives | |
| Kit Classification | Evaluation Board | |
| Featured Device | 6ED2230S12T, FP15R12W1T4 | |
| Kit Name | EVAL-M1-6ED2230-B1 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Power Management Function IGBT Gate Driver | ||
For Use With Compressors, Industrial Drives | ||
Kit Classification Evaluation Board | ||
Featured Device 6ED2230S12T, FP15R12W1T4 | ||
Kit Name EVAL-M1-6ED2230-B1 | ||
Evaluation Board for 1200 V Three-Phase SOI Gate Driver and EasyPIM™ IGBT modules
The EVAL-M1-6ED2230-B1 is a complete power evaluation board including a 1200 V three phase gate driver 6ED2230S12T and a EasyPIM™1B 1200 V three-phase module FP15R12W1T4. Designed for supporting motor drive applications with a power range up to 2 kW.
It provides AC and DC inputs as well as a 3-phase power output, offers a single emitter shunt for current sensing and a voltage divider for DC-link voltage measurement.
This power board is compatible with the iMOTION™ MADK (Modular Application Design Kit), such as Eval-M1- 099M-C for motor control.
It provides AC and DC inputs as well as a 3-phase power output, offers a single emitter shunt for current sensing and a voltage divider for DC-link voltage measurement.
This power board is compatible with the iMOTION™ MADK (Modular Application Design Kit), such as Eval-M1- 099M-C for motor control.
Summary of Features
Infineon Thin-Film-SOI technology
Fully operational to +1200 V
Integrated Ultra‐fast Bootstrap Diode and OCP
Floating channel designed for bootstrap operation
Output source/sink current capability +0.35 A/‐0.65 A
Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Over current protection with ±5% ITRIP threshold
Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
Matched propagation delay for all channels
Integrated 460 ns deadtime protection
Shoot-through (cross-conduction) protection
Fully operational to +1200 V
Integrated Ultra‐fast Bootstrap Diode and OCP
Floating channel designed for bootstrap operation
Output source/sink current capability +0.35 A/‐0.65 A
Tolerant to negative transient voltage up to -100 V (Pulse width is up 700 ns) given by SOI-technology
Undervoltage lockout for both channels
3.3 V, 5 V, and 15 V input logic compatible
Over current protection with ±5% ITRIP threshold
Fault reporting, automatic Fault clear and Enable function on the same pin (RFE)
Matched propagation delay for all channels
Integrated 460 ns deadtime protection
Shoot-through (cross-conduction) protection
Benefits
1200 V, 15 A three phase input rectifier PIM (Power Integrated Modules) IGBT module
Fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC
Low switching losses
VCEsat with positive temperature coefficient
Low VCEsat
Al2O3substrate with low thermal restistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Fast TRENCHSTOP™ IGBT4, Emitter Controlled 4 diode and NTC
Low switching losses
VCEsat with positive temperature coefficient
Low VCEsat
Al2O3substrate with low thermal restistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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