onsemi NSDP301MX3T5G Single PIN Diode, 100 mA, 80 V, 2-Pin X3-DFN2
- RS 제품 번호:
- 233-6851
- 제조사 부품 번호:
- NSDP301MX3T5G
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 10000 units)*
₩1,540,000.00
일시적 품절
- 2027년 10월 22일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 10000 - 10000 | ₩154.00 | ₩1,534,000.00 |
| 20000 - 20000 | ₩150.00 | ₩1,504,000.00 |
| 30000 + | ₩148.00 | ₩1,474,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 233-6851
- 제조사 부품 번호:
- NSDP301MX3T5G
- 제조업체:
- onsemi
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | PIN Diode | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 100mA | |
| Maximum Reverse Voltage Vr | 80V | |
| Mount Type | Surface | |
| Maximum Capacitance | 0.33pF | |
| Package Type | X3-DFN2 | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 810mV | |
| Maximum Series Resistance @ Maximum If | 1.3Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 330μm | |
| Length | 660μm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Width | 360μm | |
| Series | NSDP301MX3 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type PIN Diode | ||
Diode Configuration Single | ||
Maximum Forward Current If 100mA | ||
Maximum Reverse Voltage Vr 80V | ||
Mount Type Surface | ||
Maximum Capacitance 0.33pF | ||
Package Type X3-DFN2 | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 810mV | ||
Maximum Series Resistance @ Maximum If 1.3Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 330μm | ||
Length 660μm | ||
Standards/Approvals RoHS, Pb-Free | ||
Width 360μm | ||
Series NSDP301MX3 | ||
Automotive Standard No | ||
The ON Semiconductor NSDP301MX3T5G is a single PIN Diode for Attenuator and RF Switch, the low rs characteristics enables it to be used in high frequency applications. This PIN diode is designed to realize compact and efficient designs. The device is available in a X3DFN2 miniature package which enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
It has a low Series resistance of typical 1.3ꭥ
It has small interterminal capacitance of typical 0.33 pF
The device has less Parasitic components
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