STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 33 A, 650 V Enhancement, 3-Pin TO-247
- RS 제품 번호:
- 920-8830
- 제조사 부품 번호:
- STW42N65M5
- 제조업체:
- STMicroelectronics
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대량 구매 할인 기용 가능
Subtotal (1 tube of 30 units)*
₩412,483.50
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 30 - 30 | ₩13,749.45 | ₩412,501.05 |
| 60 - 90 | ₩13,338.00 | ₩400,140.00 |
| 120 + | ₩12,938.25 | ₩388,147.50 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 920-8830
- 제조사 부품 번호:
- STW42N65M5
- 제조업체:
- STMicroelectronics
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247 | |
| Series | MDmesh M5 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 79mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 190W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 100nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Height | 20.15mm | |
| Length | 15.75mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247 | ||
Series MDmesh M5 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 79mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 190W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 100nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Height 20.15mm | ||
Length 15.75mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
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