Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220 IRF9540NPBF

RS 제품 번호:: 541-1225
Distrelec 제품 번호:: 303-41-310
제조사 부품 번호:: IRF9540NPBF
제조업체:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220 IRF9540NPBF

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Subtotal (1 unit)*

₩2,237.20

재고있음

155 개 단위 배송 준비 완료
추가로 2026년 1월 01일 부터 20 개 단위 배송
추가로 2026년 1월 22일 부터 1,000 개 단위 배송

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수량	한팩당
1 - 12	₩2,237.20
13 - 24	₩2,180.80
25 +	₩2,162.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 541-1225
Distrelec 제품 번호:: 303-41-310
제조사 부품 번호:: IRF9540NPBF
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	23A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	117mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	-1.6V
	Typical Gate Charge Qg @ Vgs	97nC
	Maximum Power Dissipation Pd	140W
	Maximum Operating Temperature	175°C
	Width	4.69 mm
	Standards/Approvals	No
	Length	10.54mm
	Height	8.77mm
	Distrelec Product Id	30341310
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 23A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 117mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf -1.6V
	Typical Gate Charge Qg @ Vgs 97nC
	Maximum Power Dissipation Pd 140W
	Maximum Operating Temperature 175°C
	Width 4.69 mm
	Standards/Approvals No
	Length 10.54mm
	Height 8.77mm
	Distrelec Product Id 30341310
	Automotive Standard No

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF

This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.

Features & Benefits

• Handles up to 23A continuous drain current for robust performance

• Maximum drain-source voltage of 100V for consistent operation

• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency

• Capable of power dissipation up to 140W for intensive applications

• Typical gate charge of 97 nC at 10V supports fast switching

Applications

• Employed in power management circuits for efficient energy conversion

• Used in motor control systems for accurate speed regulation

• Integrated into power supply circuits to improve operational reliability

• Utilised in various automation systems for effective control functions

What is the temperature range for optimal performance?

The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.

What type of mounting is required for installation?

This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.

Can this MOSFET be used in high-frequency applications?

Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.

What is the significance of the low drain-source resistance?

A low drain-source resistance of 117 mΩ enhances overall power efficiency by minimising energy losses during operation.