Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 150 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 1000 units)*

₩2,515,440.00

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1000 - 4000₩2,515.44₩2,515,816.00
5000 +₩2,464.68₩2,465,432.00

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RS 제품 번호:
911-0834
제조사 부품 번호:
IPB200N15N3GATMA1
제조업체:
Infineon
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브랜드

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

50A

Maximum Drain Source Voltage Vds

150V

Package Type

TO-263

Series

OptiMOS 3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

10.31mm

Width

9.45 mm

Height

4.57mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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