Infineon SIPMOS Type P-Channel MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-252 SPD30P06PGBTMA1

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10 - 620₩1,291.56₩12,915.60
630 - 3140₩1,270.88₩12,708.80
3150 +₩1,045.28₩10,452.80

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포장 옵션
RS 제품 번호:
898-6864
Distrelec 제품 번호:
304-44-484
제조사 부품 번호:
SPD30P06PGBTMA1
제조업체:
Infineon
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브랜드

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

32nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.3V

Maximum Operating Temperature

175°C

Width

6.22 mm

Standards/Approvals

No

Height

2.41mm

Length

6.73mm

Automotive Standard

AEC-Q101

해당 안됨

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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