Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

RS 제품 번호:: 124-8963
제조사 부품 번호:: IRFB4110PBF
제조업체:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin TO-220

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

Subtotal (1 tube of 50 units)*

₩84,412.00

재고있음

2,900 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
50 - 50	₩1,688.24	₩84,393.20
100 - 150	₩1,650.64	₩82,550.80
200 +	₩1,614.92	₩80,727.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 124-8963
제조사 부품 번호:: IRFB4110PBF
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	180A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	370W
	Typical Gate Charge Qg @ Vgs	150nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82 mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 180A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 370W
	Typical Gate Charge Qg @ Vgs 150nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Standards/Approvals No
	Height 9.02mm
	Width 4.82 mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 180A Maximum Continuous Drain Current, 370W Maximum Power Dissipation - IRFB4110PBF

This MOSFET serves as an efficient power transistor tailored for applications in automation, electronics, and electrical industries. Its robust construction and precise specifications provide a versatile solution for applications where efficiency and reliability are essential. With an enhancement mode design and an N-channel configuration, it is suitable for high-speed switching operations.

Features & Benefits

• Maximum continuous drain current of 180A supports high performance

• Drain-to-source voltage range of 100V allows for a variety of applications

• Low RDS(on) of 4.5mΩ reduces power loss and enhances efficiency

• Power dissipation capability of up to 370W ensures stability

• Improved thermal characteristics foster reliability in extreme conditions

• Full characterisation on avalanche and dynamic dv/dt ruggedness promotes durability

Applications

• Employed in high-efficiency synchronous rectification for power supplies

• Suitable for uninterruptible power supply systems

• Ideal for high-speed power switching circuits

• Applicable in hard switched and high frequency circuits

What is the suitable operating temperature range for optimal performance?

It operates effectively within -55°C to +175°C, ensuring functionality across various environments.

How does the MOSFET minimise energy loss in circuits?

The low RDS(on) of 4.5mΩ significantly cuts conduction losses, allowing for efficient operation in power electronics.

Can it be used in high-frequency applications?

Yes, its design facilitates high-speed switching, making it appropriate for applications requiring Rapid on-off transitions.

What are the thermal resistance values for proper mounting?

The junction-to-case thermal resistance is 0.402°C/W, while the case-to-sink resistance is 0.50°C/W, enabling effective heat dissipation.

What avalanche characteristics should be considered during usage?

It supports single Pulse avalanche energy ratings, providing protection against transient voltage spikes and ensuring reliability in circuit design.