Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23
- RS 제품 번호:
- 826-9412
- 제조사 부품 번호:
- BSS316NH6327XTSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 reel of 250 units)*
₩44,000.00
재고있음
- 추가로 2026년 8월 24일 부터 500 개 단위 배송
- 추가로 2026년 8월 31일 부터 2,750 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 릴당* |
|---|---|---|
| 250 - 500 | ₩176.00 | ₩43,800.00 |
| 750 - 1250 | ₩170.00 | ₩42,700.00 |
| 1500 + | ₩168.00 | ₩42,000.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 826-9412
- 제조사 부품 번호:
- BSS316NH6327XTSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 0.6nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 0.6nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.8V | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS 2 Series MOSFET, 30V Maximum Drain Source Voltage, 1.4A Maximum Continuous Drain Current - BSS316NH6327XTSA1
This n-channel MOSFET is a surface-mount switching transistor designed for low-voltage power management in compact electronic assemblies. It operates as an enhancement-mode device suitable for switching and control tasks in automotive and industrial contexts, with a gate-source voltage rating that enables robust drive margins for typical control circuits.
Features and Benefits:
• Low on-resistance delivers efficient conduction and reduced losses
• 30V drain-source rating supports common low-voltage systems
• 1.4A continuous current capability handles moderate loads
• 0.6nC typical gate charge enables fast switching transitions
• 500mW maximum power dissipation suits tight thermal budgets
• AEC‑Q101 qualification provides automotive-grade reliability criteria
• 30V drain-source rating supports common low-voltage systems
• 1.4A continuous current capability handles moderate loads
• 0.6nC typical gate charge enables fast switching transitions
• 500mW maximum power dissipation suits tight thermal budgets
• AEC‑Q101 qualification provides automotive-grade reliability criteria
Applications
• Suitable for low-voltage automotive load switching
• Ideal for point-of-load conversion in compact electronics
• Used with battery-powered systems requiring small form factor
• Can be used for motor-drive gate control in small actuators
• Suitable for power management on densely populated boards
• Ideal for point-of-load conversion in compact electronics
• Used with battery-powered systems requiring small form factor
• Can be used for motor-drive gate control in small actuators
• Suitable for power management on densely populated boards
What thermal range can it withstand during operation?
It is specified to operate from -55°C up to 150°C, allowing use across wide temperature environments.
How many electrical connections does it present to the board?
It uses a three-pin configuration compatible with standard SOT-23 land patterns for surface mounting.
What maximum voltage should be applied between gate and source?
The gate-to-source rating is 20V, which defines the safe maximum gate-drive amplitude.
What package height and footprint considerations affect layout?
The package has a low profile with a height of 0.9mm and rectangular footprint sizing of 2.9x1.3mm for compact PCB designs.
관련된 링크들
- Infineon OptiMOS 2 Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23 BSS316NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123NH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET, 190 mA, 100 V Enhancement, 3-Pin SOT-23 BSS119NH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS 2 Type N-Channel MOSFET, 2.3 A, 20 V Enhancement, 3-Pin SOT-23 BSS806NH6327XTSA1
- Infineon OptiMOS 2 Type N-Channel MOSFET, 2.5 A, 20 V Enhancement, 3-Pin SOT-23 BSS205NH6327XTSA1
