Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

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포장 옵션
RS 제품 번호:
826-9260
Distrelec 제품 번호:
304-44-413
제조사 부품 번호:
BSP296NH6327XTSA1
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.8W

Forward Voltage Vf

0.85V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

150°C

Height

1.6mm

Width

3.5mm

Length

6.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - BSP296NH6327XTSA1


This MOSFET is a surface-mount power transistor designed for switching and control in automotive and industrial contexts. It operates as an N‑channel enhancement device suitable for applications requiring moderate current handling and high-voltage capability, while withstanding a broad ambient temperature range for demanding environments.

Features and Benefits:


• 100V drain-source rating enables high-voltage switching
• 1.2A continuous drain current supports modest load currents
• 800 mΩ Rds(on) reduces conduction losses under load
• 4.5 nC typical gate charge allows faster switching transitions
• 1.8W maximum power dissipation manages thermal load in compact assemblies
• ±20V gate tolerance supports common gate-drive voltages

Applications


• Suitable for automotive control modules requiring AEC‑Q101 qualification
• Ideal for DC/DC converter stages in compact power supplies
• Used with low-power motor drivers in auxiliary systems
• Can be used for battery management and power distribution tasks
• Useful in switch‑mode regulation for portable and embedded equipment

What package type should I expect for PCB layout considerations?


It is supplied in a SOT‑223 surface‑mount package with four pins, allowing single‑sided thermal conduction and straightforward through‑board footprint integration.

How does thermal performance behave at elevated temperatures?


The device is rated to operate across a wide range from -55 °C to 150 °C, with power dissipation limited to 1.8W to prevent thermal overstress under continuous operation.

What gate‑drive constraints must be observed during design?


The maximum allowable gate‑source voltage is 20V, so gate drivers should be configured to avoid exceeding this level to protect the gate oxide.

Which parameter most affects switching efficiency in fast PWM applications?


The typical gate charge of 4.5 nC directly influences switching losses and drive‑energy requirements during rapid state changes.

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