Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1

RS 제품 번호:: 826-9204
제조사 부품 번호:: IPB600N25N3GATMA1
제조업체:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1

본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.

대량 구매 할인 기용 가능

View bulk pricing options

Subtotal (1 pack of 10 units)*

₩48,640.00

540 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	한팩당*
10 - 240	₩4,864.00	₩48,640.00
250 - 490	₩4,742.00	₩47,420.00
500 +	₩4,670.00	₩46,700.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 826-9204
제조사 부품 번호:: IPB600N25N3GATMA1
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	250V
	Series	OptiMOS 3
	Package Type	TO-263
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	136W
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	4.57mm
	Length	10.31mm
	Standards/Approvals	No
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 250V
	Series OptiMOS 3
	Package Type TO-263
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 136W
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 4.57mm
	Length 10.31mm
	Standards/Approvals No
	Automotive Standard No

Infineon OptiMOS 3 Series MOSFET, 250V Drain Source Voltage, 25A Continuous Drain Current - IPB600N25N3GATMA1

This MOSFET is a high-voltage N-channel switching transistor designed for power conversion and switching tasks in demanding electronic systems. It operates across a very wide temperature span and is configured for surface-mount implementation, offering a compact footprint for thermal management in assemblies where robust power handling and gate control are required.

Features and Benefits:

• 250V drain-to-source rating enables high-voltage switching capability
• 60mΩ on-resistance reduces conduction losses and improves efficiency
• 25A continuous drain current supports sustained high-load operation
• 136W power dissipation permits significant heat handling in circuits
• 22nC gate charge affords predictable switching energy and drive design
• 20V gate-source limit allows standard gate-drive voltage margins

Applications

• Suitable for high-voltage SMPS primary switching stages
• Ideal for industrial motor-drive inverter legs
• Used for DC-DC converters in telecoms power systems
• Can be used for battery management and charger topology
• Employed in general-purpose power switching on surface-mounted boards

What thermal range can it tolerate during operation?

It is rated to function from -55°C up to 175°C, allowing use in environments with extreme temperature variation.

Which package type facilitates assembly and heat transfer?

It comes in a TO-263 surface-mount package that eases solder mounting and offers a large thermal pad for resistor heat spreading.

How does the device behave for gate-drive design?

The typical gate charge of 22nC provides a quantifiable switching energy to size gate drivers and estimate switching losses.

What conduction performance should designers expect under load?

With a maximum specified drain-source resistance of 60mΩ, designers can calculate conduction losses for current paths up to the rated continuous 25A.