Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90N03S4L02ATMA1
- RS 제품 번호:
- 825-9398
- 제조사 부품 번호:
- IPD90N03S4L02ATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩9,456.40
재고있음
- 2,230 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 620 | ₩1,891.28 | ₩9,456.40 |
| 625 - 1245 | ₩1,842.40 | ₩9,212.00 |
| 1250 + | ₩1,812.32 | ₩9,061.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 825-9398
- 제조사 부품 번호:
- IPD90N03S4L02ATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | OptiMOS-T2 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 2.3mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series OptiMOS-T2 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 2.3mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C Peak reflow
175°C operating temperature
Green Product (RoHS compliant)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
관련된 링크들
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S4L03ATMA2
- Infineon IPD Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-252 IPD90N03S4L03ATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode, 90 A, 60 V Enhancement, 3-Pin TO-252 IPD90N06S407ATMA2
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 40 V Enhancement, 3-Pin TO-252 IPD90N04S403ATMA1
- Infineon OptiMOS Type P-Channel MOSFET & Diode, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA2
- Infineon OptiMOS Type N-Channel MOSFET, 90 A, 80 V Enhancement, 3-Pin PG-TO252-3 IPD046N08N5ATMA1
- Infineon OptiMOS P Type P-Channel Power Transistor, 90 A, 30 V Enhancement, 3-Pin TO-252 IPD90P03P4L04ATMA1
- Infineon OptiMOS-T2 Type N-Channel MOSFET, 90 A, 100 V Enhancement, 3-Pin TO-252 IPD90N10S4L06ATMA1
