DiodesZetex Isolated 2 Type N, Type P-Channel Power MOSFET, 4.5 A, 30 V Enhancement, 6-Pin TSOT DMG6601LVT-7
- RS 제품 번호:
- 823-2915
- 제조사 부품 번호:
- DMG6601LVT-7
- 제조업체:
- DiodesZetex
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- RS 제품 번호:
- 823-2915
- 제조사 부품 번호:
- DMG6601LVT-7
- 제조업체:
- DiodesZetex
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSOT | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.4nC | |
| Maximum Gate Source Voltage Vgs | -12V, +12V | |
| Forward Voltage Vf | 750mV | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | |
| Width | 1.6mm | |
| Length | 2.9mm | |
| Height | 900μm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 모두 선택 | ||
|---|---|---|
브랜드 DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSOT | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.4nC | ||
Maximum Gate Source Voltage Vgs -12V, +12V | ||
Forward Voltage Vf 750mV | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | ||
Width 1.6mm | ||
Length 2.9mm | ||
Height 900μm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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