MPN

Toshiba Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin SC-67 TK10A60D,S5Q(J

RS Stock No.:: 799-4996
Mfr. Part No.:: TK10A60D,S5Q(J
Brand:: Toshiba

Toshiba Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin SC-67 TK10A60D,S5Q(J

Bulk discount available

Subtotal (1 pack of 5 units)*

₩13,385.60

단종되는 중

최종적인 20 개 unit(s)이 배송 준비 됨

Units	Per unit	Per Pack*
5 - 20	₩2,677.12	₩13,385.60
25 - 120	₩2,596.28	₩12,983.28
125 - 245	₩2,515.44	₩12,580.96
250 - 495	₩2,462.80	₩12,314.00
500 +	₩2,408.28	₩12,045.16

*price indicative

RS Stock No.:: 799-4996
Mfr. Part No.:: TK10A60D,S5Q(J
Brand:: Toshiba

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	브랜드	Toshiba
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	600V
	Package Type	SC-67
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	750mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.7V
	Typical Gate Charge Qg @ Vgs	25nC
	Maximum Power Dissipation Pd	45W
	Maximum Gate Source Voltage Vgs	±30 V
	Maximum Operating Temperature	150°C
	Length	10mm
	Width	4.5 mm
	Height	15mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	브랜드 Toshiba
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 600V
	Package Type SC-67
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 750mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.7V
	Typical Gate Charge Qg @ Vgs 25nC
	Maximum Power Dissipation Pd 45W
	Maximum Gate Source Voltage Vgs ±30 V
	Maximum Operating Temperature 150°C
	Length 10mm
	Width 4.5 mm
	Height 15mm
	Standards/Approvals No
	Automotive Standard No

COO (Country of Origin):: MY

Toshiba Type N-Channel MOSFET, 10 A, 600 V Enhancement, 3-Pin SC-67 TK10A60D,S5Q(J

MOSFET Transistors, Toshiba

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