onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT

RS 제품 번호:: 759-9572
제조사 부품 번호:: FDME1023PZT
제조업체:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT

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대량 구매 할인 기용 가능

Subtotal (1 pack of 5 units)*

₩3,666.00

마지막 RS 재고

최종적인 4,285 개 unit(s)이 배송 준비 됨

수량	한팩당	한팩당*
5 - 1245	₩733.20	₩3,666.00
1250 - 2495	₩714.40	₩3,572.00
2500 +	₩703.12	₩3,515.60

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 759-9572
제조사 부품 번호:: FDME1023PZT
제조업체:: onsemi

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	Power MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.6A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	MicroFET Thin
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	142mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.2V
	Typical Gate Charge Qg @ Vgs	7.7nC
	Maximum Gate Source Voltage Vgs	8 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.4W
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	1.6mm
	Width	1.6 mm
	Height	0.5mm
	Number of Elements per Chip	2
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type Power MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.6A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type MicroFET Thin
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 142mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.2V
	Typical Gate Charge Qg @ Vgs 7.7nC
	Maximum Gate Source Voltage Vgs 8 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.4W
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 1.6mm
	Width 1.6 mm
	Height 0.5mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel Power MOSFET, 2.6 A, 20 V Enhancement, 6-Pin MicroFET Thin FDME1023PZT

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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