onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin MLP8 FDMC6679AZ
- RS 제품 번호:
- 759-9522
- 제조사 부품 번호:
- FDMC6679AZ
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 tape of 5 units)*
₩11,768.80
마지막 RS 재고
- 최종적인 20,630 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | Per Tape* |
|---|---|---|
| 5 - 745 | ₩2,353.76 | ₩11,768.80 |
| 750 - 1495 | ₩2,297.36 | ₩11,486.80 |
| 1500 + | ₩2,259.76 | ₩11,298.80 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 759-9522
- 제조사 부품 번호:
- FDMC6679AZ
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | MLP8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41W | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Lead-Free and RoHS | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Width | 3.3 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type MLP8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41W | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Lead-Free and RoHS | ||
Length 3.3mm | ||
Height 0.75mm | ||
Width 3.3 mm | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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