onsemi QFET Type P-Channel MOSFET, 47 A, 60 V Enhancement, 3-Pin TO-220 FQP47P06
- RS 제품 번호:
- 671-5127
- 제조사 부품 번호:
- FQP47P06
- 제조업체:
- onsemi
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대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩25,192.00
제한된 재고
- 추가로 2025년 12월 29일 부터 100 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 10 | ₩5,038.40 | ₩25,192.00 |
| 15 - 20 | ₩4,914.32 | ₩24,571.60 |
| 25 + | ₩4,839.12 | ₩24,195.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 671-5127
- 제조사 부품 번호:
- FQP47P06
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | QFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -4V | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Length | 10.1mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series QFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -4V | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Length 10.1mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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